Julien Cors, Aditya Kashyap, et al.
PLoS ONE
The effects of intense pulsed H+, B+ and Ba+ beam irradiation of single crystal Si and of ion implantation damaged Si have been studied by spreading resistance measurement, backscattering and channeling, and TEM. This paper reports the measurements and their correlation. The observations are fully consistent with ordinary melting and solidification of the upper layers of Si. © 1982.
Julien Cors, Aditya Kashyap, et al.
PLoS ONE
Jacqueline S. Dron, Minxian Wang, et al.
Circulation: Genomic and Precision Medicine
MingYu Lu, Zachary Shahn, et al.
AMIA ... Annual Symposium proceedings. AMIA Symposium
F.M. D'Heurle, P. Gas, et al.
Defect and Diffusion Forum