Saeel Sandeep Nachane, Ojas Gramopadhye, et al.
EMNLP 2024
The effects of intense pulsed H+, B+ and Ba+ beam irradiation of single crystal Si and of ion implantation damaged Si have been studied by spreading resistance measurement, backscattering and channeling, and TEM. This paper reports the measurements and their correlation. The observations are fully consistent with ordinary melting and solidification of the upper layers of Si. © 1982.
Saeel Sandeep Nachane, Ojas Gramopadhye, et al.
EMNLP 2024
Daniel Darvish
Medical Hypotheses
Seymour H. Koenig, Rodney D. Brown
Magnetic Resonance in Medicine
Shashanka Ubaru, Lior Horesh, et al.
Journal of Biomedical Informatics