Michael. S. Gordon, Kenneth P. Rodbell, et al.
IEEE TNS
The use of state-of-the-art microelectronic devices in space radiation environments faces new challenges with the adoption of low dielectric constant (low-k) materials as interlevel dielectrics. This is demonstrated in a preliminary study of methyl-silsesquioxane low-k films. We report radiation damage, induced by a 2-kev low- current.density (∼ 2 × 106 s-1cm-2) positron beam, and observed by positron annihilation spectroscopy.
Michael. S. Gordon, Kenneth P. Rodbell, et al.
IEEE TNS
Martha V. O'Bryan, Kenneth A. LaBel, et al.
REDW/NSREC 2011
Jeng-Bang Yau, Michael S. Gordon, et al.
VLSI-TSA 2011
Zhen Zhang, Siyuranga Obasa Koswatta, et al.
IEEE Electron Device Letters