J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
The interaction of cobalt (Co) and low-pressure chemical-vapor-deposited silicon nitride (LPCVD Si3N4 during anneals from 200 °C-1000 °C in vacuum, Ar, and Ar-H2 ambient (95% Ar and 5% H2 has been studied. After the anneals, reduction of Si3N4 by Co to form cobalt silicide and cobalt nitride phases has been observed. Reduction of Si3N4 initially occurs at 600 °C; however, gross physical damage occurs at temperatures of —900 °C in Ar. The addition of hydrogen to the ambient enhances the onset of physical damage to the nitride film by as much as 200 °C. Mechanisms governing the Co/Si3N4 reaction have been proposed. © 1993, Materials Research Society. All rights reserved.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007