Noah Sturcken, Eugene J. O'Sullivan, et al.
IEEE JSSC
Spin-torque Magnetoresistive Random Access Memory (ST-MRAM) is the subject of intense investigation since it extends MRAM technology to densities beyond those achieved with the earlier field-switched MRAM technology. This paper reviews recent developments in ST-MRAM MTJ device technology, including exciting progress in scaling MTJs down to dimensions approaching 20 nm. Fabrication issues relevant to development of ST-MRAM, including its integration with CMOS back-end-of-line (BEOL) processing, are also briefly discussed. © The Electrochemical Society.
Noah Sturcken, Eugene J. O'Sullivan, et al.
IEEE JSSC
D.C. Worledge, M. Gajek, et al.
IMW 2012
Jonathan Z. Sun, S.L. Brown, et al.
Physical Review B - CMMP
D.C. Worledge, A. Annunziata, et al.
INTERMAG 2015