R.M. Shelby, J. Hoffnagle, et al.
Optics Letters
BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials[1-4] are shown to be capable of both maintaining and moving rapidly between all the roles necessary for 3D crosspoint memory (un-selected, half-selected, selected(read), and selected(write)). Ultra-low leakage is maintained over hours, recovery dynamics after both write (30-50uA) and read (3-6uA) operations are explored, and read operations fast enough for use with MRAM (sub-50ns) at low voltages are demonstrated. © 2013 JSAP.
R.M. Shelby, J. Hoffnagle, et al.
Optics Letters
S.C. Lai, S. Kim, et al.
VLSI Technology 2013
B. Rajendran, M.H. Lee, et al.
VLSI Technology 2008
J. Amet, F.I. Baida, et al.
Photonics and Nanostructures - Fundamentals and Applications