A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Electromigration in Cu interconnections with a 10-nm thick selective electroless CoWP coating on the top surface of Cu dual damascene lines has been investigated. The grain structures of the lines embedded in SiLK semiconductor dielectric ranged from bamboo-like to polycrystalline. CoWP coated structures exhibited a greatly improved Cu electromigration lifetime which was attributed to a reduction in Cu interface diffusion. © 2003 Elsevier B.V. All rights reserved.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
L. Gignac, S. Mittal, et al.
Microscopy and Microanalysis