Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
Hot-carrier degradation and bias-temperature instability of FinFET and fully-depleted SOI devices with high-k gate dielectrics and metal gates are investigated. Thinner SOI results in increased hot-carrier degradation, which can be recovered by junction engineering. FinFETs with (1 1 0) Si active surfaces exhibit degradation of sub-threshold swing after hot carrier stress, indicating generation of interface states. The effect of duty cycle on bias-temperature instability modulates the quasi-steady-state trap occupancy over a broad distribution of electron trapping and de-trapping times. Only the deeper traps remain filled for low duty cycle, and shallower traps are emptied during AC stress. © 2010 Elsevier Ltd. All rights reserved.
Imran Nasim, Melanie Weber
SCML 2024
Michiel Sprik
Journal of Physics Condensed Matter
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry