S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
The Schottky barrier heights of scandium deposited on n- and p-type silicon have been measured by the capacitance versus voltage technique. Respective values of about 0.4 and 0.7 eV were determined; they do not change upon the formation of the monosilicide, ScSi, after annealing at 500°C. These results are similar to those obtained with yttrium and the rare-earth metals, in agreement with the respective positions of these elements in the Periodic Table: same column, but fourth, fifth and sixth periods, respectively. © 1991.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering