Shu-Jen Han, Alberto Valdes Garcia, et al.
IEDM 2013
Self-heating of FinFET transistors is a reliability concern, especially for large devices with dense arrays of fins on Silicon On Insulator. In this paper, device-level temperature measurements acquired using an optical technique are presented. The 2-D time-resolved emission measurements through the substrate are used to monitor the temperature-dependent modulation of the OFF-state leakage current of individual transistors, noninvasively and with high time accuracy. Different device geometries and operating conditions are evaluated and compared.
Shu-Jen Han, Alberto Valdes Garcia, et al.
IEDM 2013
Phillip J. Restle, Craig A. Carter, et al.
Digest of Technical Papers-IEEE International Solid-State Circuits Conference
Franco Stellari, Alan J. Weger, et al.
IRPS 2018
Alberto Valdes-Garcia, Fengnian Xia, et al.
IMS 2013