Silicon RF technology - The two generic approaches

Abstract

The implementation of a complete RF transceiver system on a single silicon chip is motivated by a rapidly emerging wireless communication market which extends to consumer as well as commercial applications. This paper attempts to identify two generic paths on which the required fabrication processes and device structures can be accomplished. The first approach is conservative and aims for an engineering of the RF functions without altering the existing silicon fabrication scheme. The second, more innovative development path considers the introduction of new materials and process steps in order to overcome the limitations of silicon processes in comparison to hybrid RF technology.