Robert W. Keyes
IBM J. Res. Dev
A model of the effect of random fluctuations in the number of impurity atoms in the depletion layer of a field-effect transistor (FET) is presented and analyzed. It is concluded that the range of space charge per unit area that must be anticipated on a chip containing N FET's each of area A is n is the doping level of the substrate. Copyright © 1975 by The Institute of Electrical and Electronics Engineers, Inc.
Robert W. Keyes
IBM J. Res. Dev
Robert W. Keyes, Mark B. Ketehen
UEO 1993
Robert W. Keyes
Science
Robert W. Keyes
Applied Physics