Integrated ferroelectric plasmonic optical modulator
Andreas Messner, Felix Eltes, et al.
OFC 2017
We report on the stabilization of ferroelectric Hf x Zr 1-x O 2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 °C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are comparable to that achieved using a 300 s 650 °C rapid thermal anneal. X-ray diffraction, capacitance voltage, and polarization hysteresis analysis consistently point to the formation of the ferroelectric phase of HZO. A remanent polarization (P r ) of ∼21 μC/cm 2 and a coercive field (E c ) of ∼1.1 MV/cm are achieved in 10 nm thick HZO layers. Such a technique promises a new alternative solution for low thermal budget formation of ferroelectric HZO films.
Andreas Messner, Felix Eltes, et al.
OFC 2017
Felix Eltes, Daniele Caimi, et al.
ACS Photonics
Herwig Hahn, Marc Seifried, et al.
DRC 2017
Laura Begon-Lours, Mattia Halter, et al.
IEEE J-EDS