A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Paper
Synchrotron x-ray diffraction and transmission electron microscopy studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers
Abstract
The interfacial reaction paths and kinetics in highly 002-textured Al/TiN bilayers, grown on SiO2, were studied. It was found that TiN barrier failure is initiated at the Al/TiN interface with the formation of a thin continuous AlN interfacial layer which is initially in the metastable zinc-blende structure through a local epitaxial relationship with the underlying TiN.
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