C.L. Lin, M.O. Aboelfotoh, et al.
IEDM 1993
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
C.L. Lin, M.O. Aboelfotoh, et al.
IEDM 1993
P.D. Kirchner, T.N. Jackson, et al.
Applied Physics Letters
B.G. Briner, R.M. Feenstra, et al.
Semiconductor Science and Technology
J. Woodall, P.D. Kirchner, et al.
Surface Science