H.J. Hovel
Semiconductor Science and Technology
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
H.J. Hovel
Semiconductor Science and Technology
H.J. Hovel
IEEE T-ED
D.D. Nolte, M.R. Melloch, et al.
Applied Physics Letters
S.W. Bedell, H.J. Hovel, et al.
ECS Meeting 2005