S. Voldman, R. Schulz, et al.
Journal of Electrostatics
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
S. Voldman, R. Schulz, et al.
Journal of Electrostatics
J.J. Rosenberg, M. Benlamri, et al.
IEEE T-ED
J. Freeouf, J. Woodall
Applied Physics Letters
M.I. Nathan, T.N. Jackson, et al.
Journal of Electronic Materials