Jae-Joon Kim, Aditya Bansal, et al.
IEEE Electron Device Letters
We propose selective scaling of device footprint for 65 nm and beyond CMOS technologies. The benefits of selective scaling of device footprint are illustrated using an ultrathin-body fully depleted silicon-on-insulator transistor as an example. We study the effect of footprint scaling on device, circuit, and system level performance. A complete 2-D device structure is modeled for the numerical analysis. The results predict that an optimal footprint design can provide 30% smaller chip layout area, 20% faster speed, and 10% less dynamic power on overall chip performance benchmarked with a 53-bit pipelined multiplier. The variability analysis on both dc and ac characteristics indicates that the benefits of selective footprint scaling are not degraded by device variation. © 2007 IEEE.
Jae-Joon Kim, Aditya Bansal, et al.
IEEE Electron Device Letters
Hung Ngo, Keunwoo Kim, et al.
VLSI-TSA 2006
Saibal Mukhopadhyay, Keunwoo Kim, et al.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Ching-Te Chuang, Saibal Mukhopadhyay, et al.
MTDT 2007