R. Ghez, M.B. Small
JES
The dependences on crystal orientation of strains normal to a film surface and of the resolved shear stress for dislocation glide were calculated for Pb thin films strained by an underlying substrate using the biaxial strain model. These results are plotted on (111) stereographic projections. The calculated values compare favorably with experimental values obtained by X-ray diffraction on Pb films deposited onto oxidized Si substrates at room temperature and subsequently cooled to lower temperatures. © 1977.
R. Ghez, M.B. Small
JES
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
T.N. Morgan
Semiconductor Science and Technology
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009