Robert H. Dennard, Jin Cai, et al.
Solid-State Electronics
Paper
Threshold Voltage Characteristics of Depletion-Mode MOSFET's
Abstract
This paper presents the results of a study of the characteristics of the depletion-mode MOSFET. In particular, it is shown that the threshold voltage of this device is a function of its mode of operation (linear or saturated) due to a change in dominant conduction mechanisms caused by the finite depth of donor impurities in the channel. The effect of these impurities on the short channel behavior of the devices also is examined. Copyright © 1981 by The Institute of Electrical and Electronics Engineers, Inc.
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