Conference paper
A novel high-performance lateral bipolar on SOI
G. Shahidi, D.D. Tang, et al.
IEDM 1991
This paper reports an accurate method of measuring the anomalous leakage current in pass-gate MOSFET's unique to SOI devices. A high-speed measurement setup is used to provide experimental results, and to quantify the magnitude of leakage. Particularly, great care is taken to measure only the device leakage current and not the currents due to parasitic capacitances. Systematic influences of different factors such as temperature, bias, device history, and device structure on this leakage current are experimentally established.
G. Shahidi, D.D. Tang, et al.
IEDM 1991
F. Assaderaghi, W. Rausch, et al.
IEDM 1997
Yanning Sun, E.W. Kiewra, et al.
IEDM 2008
S. Voldman, D. Hui, et al.
IEEE International SOI Conference 1999