PaperTP-A6 The Behavior of Schottky Barriers to GaAs as a function of Annealing TemperatureH.J. Hovel, C. LanzaIEEE T-ED
Conference paper0.25μm low power CMOS devices and circuits from 8 inch SOI materialsB. Chen, A.S. Yapsir, et al.ICSICT 1995
PaperElectrical and optical properties of rf-sputtered GaN and InNH.J. Hovel, J.J. CuomoApplied Physics Letters