Silicon epitaxy from silane by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
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42 results for T.S. Kuan
Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters
Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular-beam epitaxy
- T.S. Kuan
- Subramanian S. Iyer
- 1991
- Applied Physics Letters
High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
- T.O. Sedgwick
- P. Agnello
- et al.
- 1991
- Applied Physics Letters
Growth and properties of thin GaAs epitaxial layers on Al2O 3
- T.F. Kuech
- A. Segmüller
- et al.
- 1990
- Journal of Applied Physics
Low-temperature selective epitaxial growth of silicon at atmospheric pressure
- T.O. Sedgwick
- M. Berkenblit
- et al.
- 1989
- Applied Physics Letters
Oxide-Thickness Determination in Thin-Insulator MOS Structures
- Bruno Ricco
- Piero Olivo
- et al.
- 1988
- IEEE T-ED
Long-range order in InxGa1-xAs
- T.S. Kuan
- W.I. Wang
- et al.
- 1987
- Applied Physics Letters
Evidence of the role of defects near the injecting interface in determining SiO2 breakdown
- P. Olivo
- B. Ricco
- et al.
- 1987
- Applied Physics Letters
The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1-xAs layers and heterostructures
- T.F. Kuech
- E. Veuhoff
- et al.
- 1986
- Journal of Crystal Growth