Unpinned (100) GaAs surfaces in air using photochemistry
- S.D. Offsey
- J. Woodall
- et al.
- 1986
- Applied Physics Letters
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69 results for P.D. Kirchner
Absence of Fermi level pinning at metal-InxGa1-xAs(100) interfaces
- L.J. Brillson
- M.L. Slade
- et al.
- 1986
- Applied Physics Letters
Controlled low barrier height n+-InGaAs/n-GaAs pseudomorphic heterojunction schottky diodes
- A.W. Kleinsasser
- J. Woodall
- et al.
- 1985
- Applied Physics Letters
VA-5 Pseudomorphic GaInAs/GaAs Single Quantum Well High Electron Mobility Transistor
- J.J. Rosenberg
- M. Benlamri
- et al.
- 1985
- IEEE T-ED
Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs
- P.D. Kirchner
- T.N. Jackson
- et al.
- 1985
- Applied Physics Letters
Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions
- M.I. Nathan
- T.N. Jackson
- et al.
- 1983
- Journal of Electronic Materials
IVA-7 A New High Purity Si Doping Source for MBE Grown GaAs Devices
- P.D. Kirchner
- J. Woodall
- et al.
- 1983
- IEEE T-ED
The analysis of exponential and nonexponential transients in deep-level transient spectroscopy
- P.D. Kirchner
- W.J. Schaff
- et al.
- 1981
- Journal of Applied Physics
Volatile metal-oxide incorporation in layers of GaAs, Ga 1-xAlxAs and related compounds grown by molecular beam epitaxy
- P.D. Kirchner
- J. Woodall
- et al.
- 1981
- Applied Physics Letters