Microstructure and electrical characteristics of tungsten and WSix contacts to GaAs
- D.P. Basile
- C.L. Bauer
- et al.
- 1991
- Materials Science and Engineering B
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45 results for T.N. Jackson
IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S
- T.N. Jackson
- P. Solomon
- et al.
- 1991
- IEEE T-ED
IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S
- C.M. Ransom
- T.N. Jackson
- et al.
- 1991
- IEEE T-ED
Accumulation capacitance for GaAs-SiO2 interfaces with Si interlayers
- J. Freeouf
- D.A. Buchanan
- et al.
- 1990
- Applied Physics Letters
Crossover from tunneling to metallic behavior in superconductor- semiconductor contacts
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1990
- Applied Physics Letters
Critical currents of superconducting metal-oxide-semiconductor field-effect transistors
- A.W. Kleinsasser
- T.N. Jackson
- 1990
- Physical Review B
Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs
- M. Eizenberg
- A.C. Callegari
- et al.
- 1989
- Applied Physics Letters
Superconducting InGaAs junction field-effect transistors with Nb electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- Applied Physics Letters
InGaAs superconducting JFET's with Nb electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- IEEE T-ED
VIB-1 InGaAs Superconducting JFET's with Nb Electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- IEEE T-ED