PaperIIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'SC.M. Ransom, T.N. Jackson, et al.IEEE T-ED
Conference paperUltra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETsD. Singh, P. Solomon, et al.IEDM 2004
PaperThermal stability of undoped strained Si channel SiGe heterostructuresH. Klauk, T.N. Jackson, et al.Applied Physics Letters
