Gate-Self-Aligned P-Channel Germanium Misfet's

Abstract

We have fabricated the first gate-self-aligned germanium MISFET's and have obtained record transconductance for germanium FET's. The devices fabricated are p-channel, inversion-mode, germanium MISFET's. A germanium-oxynitride gate dielectric is used and aluminum gates serve as the mask for self-aligned source and drain implants. A maximum room-temperature transconductance of 104 mS/mm was measured for a 0.6-μm gate length. A hole inversion channel mobility of 640 cm2/Vs was calculated using transconductance and capacitance data from long-channel devices. This large hole channel mobility suggests that germanium may be an attractive candidate for CMOS technology. © 1991 IEEE