Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
- D.J. Frank
- S.E. Laux
- et al.
- 1992
- IEDM 1992
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102 results for Massimo V. Fischetti
Overshoot in transient and steady-state in GaAs, InP, Ga.47In.53As, and InAs bipolar transistors
- S. Tiwari
- M.V. Fischetti
- et al.
- 1990
- IEDM 1990
The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors
- E.F. Crabbe
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
Are GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETs
- M.V. Fischetti
- S.E. Laux
- 1989
- IEDM 1989
Monte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors
- Wai Lee
- S.E. Laux
- et al.
- 1989
- IEDM 1989
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
- L.Å. Ragnarsson
- S. Guha
- et al.
- 2001
- IEEE Electron Device Letters
Soft-x-ray induced core-level photoemission as a probe of hot-electron dynamics in SiO2
- F.R. McFeely
- E. Cartier
- et al.
- 1990
- Physical Review Letters
Monte-Carlo Simulation of Submicrometer Si n-MOSFET's at 77 and 300 K
- Steven E. Laux
- M.V. Fischetti
- 1988
- IEEE Electron Device Letters
Electron interference effects in quantum wells: Observation of bound and resonant states
- M. Heiblum
- M.V. Fischetti
- et al.
- 1987
- Physical Review Letters
Direct observation of ballistic electrons in silicon dioxide
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Physical Review Letters