Study of boron penetration through thin oxide with p+-polysilicon gate
- J.Y.-C. Sun
- C.Y. Wong
- et al.
- 1989
- VLSI Technology 1989
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34 results for C.Y. Wong
Rapid thermal processing of arsenic-implanted polysilicon on very thin oxide
- J.Y.-C. Sun
- R. Angelucci
- et al.
- 1988
- ESSDERC 1988
POLYSILICON EMITTER RESISTANCE AND CARRIER TRANSPORT STUDIES.
- J.M.C. Stork
- C.Y. Wong
- et al.
- 1984
- VLSI Technology 1984
PtSi-Induced Junction Leakage
- J.P. Gambino
- M.D. Monkowski
- et al.
- 2019
- JES
As segregation to grain boundaries in Si
- C.R.M. Grovenor
- P.E. Batson
- et al.
- 2006
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
A High-Performance 0.25-μm CMOS Technology: II—Technology
- Bijan Davari
- Wen-Hsing Chang
- et al.
- 1992
- IEEE T-ED
Chemically induced grain boundary migration in doped polycrystalline silicon films
- K.N. Tu
- J. Tersoff
- et al.
- 1988
- Solid State Communications
Electrical activation of arsenic ion-implanted polycrystalline silicon by rapid thermal annealing
- C.Y. Wong
- Y. Komem
- et al.
- 1987
- Applied Physics Letters
Effects of reactive ion etching on chemical vapor deposition
- C.Y. Wong
- P.E. Batson
- 1987
- Applied Physics Letters
Inducing rapid epitaxy of polycrystalline silicon films deposited on 〈100〉 silicon by arsenic ion implantation
- Y. Komem
- C.Y. Wong
- et al.
- 1987
- Journal of Applied Physics