Bias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the "carrier-induced defect creation" model correct?
- A. Gelatos
- Jerzy Kanicki
- 1990
- Applied Physics Letters
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60 results for Jerzy Kanicki
Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films
- Sean E. Curry
- P. Lenahan
- et al.
- 1990
- Applied Physics Letters
Light-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films
- Jerzy Kanicki
- D. Jousse
- et al.
- 1989
- Journal of Non-Crystalline Solids
Investigation of the plasma deposited silicon dioxide on hydrogenated amorphous silicon interface by capacitance measurements
- A. Gelatos
- Peter Wagner
- et al.
- 1989
- Journal of Non-Crystalline Solids
Gate dielectric and contact effects in hydrogenated amorphous silicon-silicon nitride thin-film transistors
- Naftali Lustig
- Jerzy Kanicki
- 1989
- Journal of Applied Physics
Observation of multiple silicon dangling bond configurations in silicon nitride
- D. Jousse
- Jerzy Kanicki
- et al.
- 1989
- Applied Physics Letters
Spatial charge distribution in the plasma-enhanced chemical vapor deposited nitrogen-rich silicon nitride
- Jerzy Kanicki
- S. Hug
- 1989
- Applied Physics Letters
Investigation of the light-induced effects in nitrogen-rich silicon nitride films
- D. Jousse
- Jerzy Kanicki
- 1989
- Applied Physics Letters
Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films
- W.S. Lau
- S.J. Fonash
- et al.
- 1989
- Journal of Applied Physics
Electron spin resonance study of metal-nitride-silicon structures: Observation of Si dangling bonds with different configurations and trapping properties in silicon nitride
- D. Jousse
- Jerzy Kanicki
- et al.
- 1989
- Applied Surface Science