Reliable 1.2W CW red-emitting (Al)GaInP diode laser array with AlGaAs cladding layers
- H. Jaeckel
- G.L. Bona
- et al.
- 1993
- Electronics Letters
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23 results for H. Jaeckel
Indium Migration and Controlled Lateral Bandgap Variations in High-Power Strained Layer Ingaas-Algaas Lasers Grown on Nonplanar Substrates
- Luigi R. Brovelli
- Douglas J. Arent
- et al.
- 1991
- IEEE JQE
Very High-Power (425 Mw) Algaas Sqw-Grinsch Ridge Laser with Frequency-Doubled Output (41 Mw At 428 Nm)
- Heinz Jaeckel
- Gian-Luca Bona
- et al.
- 1991
- IEEE JQE
Beam Properties of AlGaAs Power Lasers with High-Quality Etched Mirrors
- G.L. Bona
- P. Buchmann
- et al.
- 1991
- IEEE Photonics Technology Letters
Wavelength tuning in high power InGaAs/AlGaAs lasers grown on nonplanar substrates
- L. Brovelli
- D.J. Arent
- et al.
- 1990
- ISLC 1990
High quality index guided ridge AlGaInP/GaInP visible lasers
- G.L. Bona
- P. Roentgen
- et al.
- 1990
- ISLC 1990
High-power fundamental mode AlGaAs quantum well channeled substrate laser grown by molecular beam epitaxy
- H. Jaeckel
- H.P. Meier
- et al.
- 1989
- Applied Physics Letters
2 ps InGaAs photoconductors and their speed-of-response evaluation by optical pulse mixing at inherent nonlinearities
- R. Loepfe
- A. Schaelin
- et al.
- 1988
- Applied Physics Letters
Scaled GaAs MESFET's with gate length down to 100 nm
- Heinz Jaeckel
- Volker Graf
- et al.
- 1986
- IEEE Electron Device Letters
Josephson 4 K-bit cache memory design for a prototype signal processor. III. Decoding, sensing, and timing
- W.H. Henkels
- L.M. Geppert
- et al.
- 1985
- Journal of Applied Physics