Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- David L. Harame
- Johannes M.C. Stork
- et al.
- 1989
- IEEE Electron Device Letters
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73 results for G. Scilla
63-75 GHz fT SiGe-base heterojunction bipolar technology
- G.L. Patton
- J.H. Comfort
- et al.
- 1990
- VLSI Technology 1990
SiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
Process damage and contamination effects for shallow Si implanted GaAs
- H. Barratte
- G. Scilla
- et al.
- 1989
- ECS Meeting 1989
TOF-SIMS study of imidization of polyimide films
- B.N. Eldridge
- W. Reuter
- et al.
- 1989
- ACS PMSE 1989
Fully self-aligned epitaxial-base transistor
- R. Schulz
- M. Jost
- et al.
- 1989
- VLSI Technology 1989
SiGe-base, poly-emitter heterojunction bipolar transistors
- G.L. Patton
- D.L. Harame
- et al.
- 1989
- VLSI Technology 1989
Chemistry of hexamethylcyclotrisilazane (HMCTS) silylation
- K.J. Stewart
- J.M. Shaw
- et al.
- 1989
- Symposium on Patterning Science and Technology 1989
Rapid thermal processing of arsenic-implanted polysilicon on very thin oxide
- J.Y.-C. Sun
- R. Angelucci
- et al.
- 1988
- ESSDERC 1988