Nucleation and growth in the reaction of titanium with germanium and some silicon-germanium alloys
- O. Thomas
- F.M. D'Heurle
- et al.
- 1989
- Applied Surface Science
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73 results for G. Scilla
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- David L. Harame
- Johannes M.C. Stork
- et al.
- 1989
- IEEE Electron Device Letters
Processing of La1.8Sr0.2CuO4 and YBa 2Cu3O7 superconducting thin films by dual-ion-beam sputtering
- P.B. Madakson
- J.J. Cuomo
- et al.
- 1988
- Journal of Applied Physics
Diffusion of Sb, Ga, Ge, and (As) in TiSi2
- P. Gas
- G. Scilla
- et al.
- 1988
- Journal of Applied Physics
Efficiency of oxygen plasma cleaning of reactive ion damaged silicon surfaces
- Gottlieb S. Oehrlein
- Gerald J. Scilla
- et al.
- 1988
- Applied Physics Letters
Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Applied Physics
High performance Si and SiGe-base pnp transistors
- D.L. Harame
- J.M.C. Stork
- et al.
- 1988
- IEDM 1988
Rapid thermal processing of arsenic-implanted polysilicon on very thin oxide
- J.Y.-C. Sun
- R. Angelucci
- et al.
- 1988
- ESSDERC 1988
Diffusion of boron, phosphorus, and arsenic implanted in thin films of cobalt disilicide
- O. Thomas
- P. Gas
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The control and modeling of doping profiles and transients in MOVPE growth
- T.F. Kuech
- P.J. Wang
- et al.
- 1988
- Journal of Crystal Growth