Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Journal of Crystal Growth
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73 results for G. Scilla
Ion-implantation-induced fluorine agglomeration in tungsten disilicide prepared by low-pressure chemical vapour deposition
- C.Sture Petersson
- Harry J. Whitlow
- et al.
- 1989
- Nuclear Inst. and Methods in Physics Research, B
Nucleation and growth in the reaction of titanium with germanium and some silicon-germanium alloys
- O. Thomas
- F.M. D'Heurle
- et al.
- 1989
- Applied Surface Science
Evolution and chemical state of oxygen upon acid dissolution of YBa2Cu3O6.98
- M.W. Shafer
- R.A. de Groot
- et al.
- 1989
- Materials Research Bulletin
Determination of metal stoichiometry in LaSrCu-oxide, YBaCu-oxide, BiCaSrCu-oxide superconducting films and bulk samples
- M.M. Plechaty
- B.L. Olson
- et al.
- 1989
- Talanta
Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Applied Physics
Diffusion of Sb, Ga, Ge, and (As) in TiSi2
- P. Gas
- G. Scilla
- et al.
- 1988
- Journal of Applied Physics
Efficiency of oxygen plasma cleaning of reactive ion damaged silicon surfaces
- Gottlieb S. Oehrlein
- Gerald J. Scilla
- et al.
- 1988
- Applied Physics Letters
Processing of La1.8Sr0.2CuO4 and YBa 2Cu3O7 superconducting thin films by dual-ion-beam sputtering
- P.B. Madakson
- J.J. Cuomo
- et al.
- 1988
- Journal of Applied Physics
Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy
- G. Scilla
- T.F. Kuech
- et al.
- 1988
- Applied Physics Letters