Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
- Joachim N. Burghartz
- Carol L. Stanis
- et al.
- 1995
- Applied Physics Letters
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67 results for J.N. Burghartz
High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier
- J.N. Burghartz
- M. Soyuer
- et al.
- 1995
- IEDM 1995
Opportunities for standard silicon technology in RFMicrowave applications
- J.N. Burghartz
- M. Soyuer
- et al.
- 1995
- ESSDERC 1995
Multilevel monolithic inductors in silicon technology
- M. Soyuer
- J.N. Burghartz
- et al.
- 1995
- Electronics Letters
A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
- Joachim N. Burghartz
- Robert C. McIntosh
- et al.
- 1994
- IEEE Transactions on Electron Devices
High-Performance Emitter-Up/Down SiGe HBT's
- Joachim N. Burghartz
- Keith A. Jenkins
- et al.
- 1994
- IEEE Electron Device Letters
A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part II—Circuit Performance and Device Self-Heating
- Joachim N. Burghartz
- Arturo O. Cifuentes
- et al.
- 1994
- IEEE Transactions on Electron Devices
Submicron CMOS Gate Electrode Discontinuity: Electrical Signature and Effect on Circuit Speed
- Keith A. Jenkins
- J.N. Burghartz
- et al.
- 1993
- IEDM 1993
APCVD-grown self-aligned SiGe-base HBTs
- J.N. Burghartz
- T.O. Sedgwick
- et al.
- 1993
- BCTM 1993
High performance complementary bipolar technology
- J. Warnock
- J.D. Cressler
- et al.
- 1993
- VLSI Technology 1993