Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
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47 results for James H. Comfort
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
A comparative device and performance analysis between a SiGe epitaxial-base HBT and a si double-poly I/I BJT npn structure
- Mario M. Pelella
- Phung T. Nguyen
- et al.
- 1992
- BCTM 1992
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992
SiGe heterojunctions: Devices and applications
- Maurizio Arienzo
- James H. Comfort
- et al.
- 1992
- ESSDERC 1992
An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature
- John D. Cresslcr
- James H. Comfort
- et al.
- 1992
- VLSI Technology 1992
73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1992
- IEEE Electron Device Letters
On the Leverage of High-fT Transistors for Advanced High-Speed Bipolar Circuits
- C.T. Chuang
- Ken Chin
- et al.
- 1992
- IEEE Journal of Solid-State Circuits
Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991