Role of excess as in low-temperature-grown GaAs
- Alan C. Warren
- J. Woodall
- et al.
- 1992
- Physical Review B
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34 results for M.R. Melloch
IIIB-8 High-Density Optical Storage Using Arsenic Nanoclusters in GaAs and AlGaAs
- M.R. Melloch
- D.D. Nolte
- et al.
- 1992
- IEEE T-ED
High-density optical storage based on nanometer-size arsenic clusters in low-temperature-growth GaAs
- D.D. Nolte
- M.R. Melloch
- et al.
- 1992
- Applied Physics Letters
Formation of two-dimensional arsenic-precipitate arrays in GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Applied Physics Letters
Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
- Alan C. Warren
- N. Katzenellenbogen
- et al.
- 1991
- Applied Physics Letters
Surface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicists
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Optoelectronic applications of GaAs epilayers containing arsenic precipitates
- Alan C. Warren
- J. Woodall
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs
- K. Mahalingam
- N. Otsuka
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates
- J. Freeouf
- Alan C. Warren
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates
- M.R. Melloch
- K. Mahalingam
- et al.
- 1991
- Journal of Crystal Growth