High-Performance Devices for a 0.15-μm CMOS Technology
- G. Shahidi
- James Warnock
- et al.
- 1993
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
58 results for E.F. Crabbé
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- John D. Cressler
- James H. Comfort
- et al.
- 1993
- IEEE Transactions on Electron Devices
High-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1993
- IEEE Electron Device Letters
Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors
- E. Zanoni
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
SiGe heterojunctions: Devices and applications
- Maurizio Arienzo
- James H. Comfort
- et al.
- 1992
- ESSDERC 1992
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992
An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature
- John D. Cresslcr
- James H. Comfort
- et al.
- 1992
- VLSI Technology 1992
On the Leverage of High-fT Transistors for Advanced High-Speed Bipolar Circuits
- C.T. Chuang
- Ken Chin
- et al.
- 1992
- IEEE Journal of Solid-State Circuits