On the Leverage of High-fT Transistors for Advanced High-Speed Bipolar Circuits
- C.T. Chuang
- Ken Chin
- et al.
- 1992
- IEEE Journal of Solid-State Circuits
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58 results for E.F. Crabbé
IIA-4 Low-Temperature Operation of SiGe p-n-p HBT's
- E.F. Crabbé
- D.L. Harame
- et al.
- 1992
- IEEE T-ED
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991
Advanced bipolar technology for the 1990s
- J.Y.-C. Sun
- J.H. Comfort
- et al.
- 1991
- VLSI-TSA 1991
Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- John D. Cressler
- James H. Comfort
- et al.
- 1991
- IEEE Electron Device Letters
High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- Sophie Verdonckt-Vandebroek
- Emmanuel F. Crabbé
- et al.
- 1991
- IEEE Electron Device Letters
63-75 GHz fT SiGe-base heterojunction bipolar technology
- G.L. Patton
- J.H. Comfort
- et al.
- 1990
- VLSI Technology 1990
The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors
- E.F. Crabbe
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
SiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990