Advanced bipolar technology for the 1990s
- J.Y.-C. Sun
- J.H. Comfort
- et al.
- 1991
- VLSI-TSA 1991
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58 results for E.F. Crabbé
63-75 GHz fT SiGe-base heterojunction bipolar technology
- G.L. Patton
- J.H. Comfort
- et al.
- 1990
- VLSI Technology 1990
SiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
Design issues for SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- VLSI Technology 1989
CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl μ/m CMOS technology
- H. Wong
- R. Chang
- et al.
- 1998
- IEEE Transactions on Electron Devices
A silicon nanocrystals based memory
- Sandip Tiwari
- Farhan Rana
- et al.
- 1996
- Applied Physics Letters
Si/SiGe Epitaxial-Base Transistors—Part II: Process Integration and Analog Applications
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
Si/SiGe Epitaxial-Base Transistors—Part I: Materials, Physics, and Circuits
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices