Buried, self-aligned barrier layer structures for perovskite-based memory devices comprising Pt or Ir bottom electrodes on silicon-contributing substrates
- K.L. Saenger
- A. Grill A
- et al.
- 1998
- Journal of Applied Physics
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19 results for David E. Kotecki
A reactive ion etch study for producing patterned platinum structures
- Curtis E. Farrell
- K.R. Milkove
- et al.
- 1997
- Integrated Ferroelectrics
Numerical simulation of etching and deposition processes
- Satoshi Hamaguchi
- Anita A. Mayo
- et al.
- 1997
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
- Kurt A. Olson
- David E. Kotecki
- et al.
- 1995
- Review of Scientific Instruments
Hydrogen incorporation in silicon nitride films deposited by remote electron-cyclotron-resonance chemical vapor deposition
- David E. Kotecki
- Jonathan D. Chapple-Sokol
- 1995
- Journal of Applied Physics
Shallow n+ Junctions in Silicon by Arsenic Gas-Phase Doping
- J.F. DeGeolormo
- D.K. Sodana
- et al.
- 1994
- JES
Interface defects of ultrathin rapid-thermal oxide on silicon
- J.H. Stathis
- D.A. Buchanan
- et al.
- 1993
- Applied Physics Letters
Reaction study of cobalt and silicon nitride
- Tai D. Nguyen
- Herbert L. Ho
- et al.
- 1993
- Journal of Materials Research
Temperature distribution in an ideal azimuthally symmetric chemicalvapor-deposition reactor
- David E. Kotecki
- Richard A. Conti
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films