Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- A. Khakifirooz
- R. Sreenivasan
- et al.
- 2013
- S3S 2013
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68 results for Bruce Doris
Device design considerations for next generation CMOS technology: Planar FDSOI and FinFET (Invited)
- Bruce Doris
- Kangguo Cheng
- et al.
- 2013
- VLSI-TSA 2013
Development of KrF hybrid resist for a dual isolation application
- Sen Liu
- Steven Holmes
- et al.
- 2013
- SPIE Advanced Lithography 2013
Evaluation of sSOI wafers for 22nm node and beyond
- F. Allibert
- Kangguo Cheng
- et al.
- 2012
- S3S 2012
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- VLSI Technology 2012
The future of SOI transistor technology
- Bruce Doris
- Ali Khakifirooz
- et al.
- 2011
- IEEE International SOI Conference 2011
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Full metal gate with borderless contact for 14 nm and beyond
- Soon-Cheon Seo
- L.F. Edge
- et al.
- 2011
- VLSI Technology 2011