Publications

27 results for Diane C. Boyd

Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication
- - K.W. Guarini
  - A. Topol
  - et al.
- 2002
- IEDM 2002
A high-speed, high-sensitivity silicon lateral trench photodetector
- - Min Yang
  - Kern Rim
  - et al.
- 2002
- IEEE Electron Device Letters
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
- - K. Rim
  - J.O. Chu
  - et al.
- 2002
- VLSI Technology 2002
Mobility enhancement in strained Si NMOSFETs with HfO₂ gate dielectrics
- - K. Rim
  - E. Gusev
  - et al.
- 2002
- VLSI Technology 2002
New polysilicon disposable sidewall process for sub-50 nm CMOS
- - K.L. Lee
  - D. Boyd
  - et al.
- 2001
- ESSDERC 2001
70 nm damascene-gate MOSFETs with minimal polysilicon gate-depletion
- - Hussein I. Hanafi
  - Russell Arndt
  - et al.
- 2001
- ESSDERC 2001
Triple-self-aligned, planar double-gate MOSFETs: Devices and circuits
- - K.W. Guarini
  - P. Solomon
  - et al.
- 2001
- Technical Digest-International Electron Devices Meeting