Optimizing CMOS technology for maximum performance
- David J. Frank
- Wilfried Haensch
- et al.
- 2006
- IBM J. Res. Dev
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27 results for Omer H. Dokumaci
Universal tunneling behavior in technologically relevant P/N junction diodes
- Paul M. Solomon
- Jason Jopling
- et al.
- 2004
- Journal of Applied Physics
Two gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
Nitrogen-induced transient enhanced diffusion of dopants
- Cheruvu Murthy
- Kilho Lee
- et al.
- 2002
- Applied Physics Letters
Comprehensive model for nitrogen diffusion in silicon
- Lahir Shaik Adam
- Mark E. Law
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
Triple-self-aligned, planar double-gate MOSFETs: Devices and circuits
- K.W. Guarini
- P. Solomon
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
A physical model for implanted nitrogen diffusion and its effect on oxide growth
- Lahir Shaik Adam
- Mark E. Law
- et al.
- 2000
- Technical Digest - International Electron Devices Meeting