Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
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21 results for J. Kedzierski
Issues in NiSi-gated FDSOI device integration
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2003
- IEDM 2003
Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2003
- IEDM 2003
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002
A functional FinFET-DGCMOS SRAM cell
- E. Nowak
- B. Rainey
- et al.
- 2002
- IEDM 2002
Silicon device scaling to the sub-10-nm regime
- Meikei Ieong
- Bruce Doris
- et al.
- 2004
- Science
Mobility and CMOS devices/circuits on sub-10nm (110) ultra thin body SOI
- Huiling Shang
- J. Rubino
- et al.
- 2005
- VLSI Technology 2005
Scaling beyond conventional CMOS device
- Meikei Ieong
- Bruce Doris
- et al.
- 2004
- ICSICT 2004
Dual workfunction fully silicided metal gates
- C. Cabral Jr.
- J. Kedzierski
- et al.
- 2004
- VLSI Technology 2004
Scaling beyond the 65 nm node with FinFET-DGCMOS
- E. Nowak
- T. Ludwig
- et al.
- 2003
- CICC 2003