Issues in NiSi-gated FDSOI device integration
Jakub Kedzierski, Diane Boyd, et al.
IEDM 2003
We present self-consistent solutions of ultrathin body device structures to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. We show that two-dimensional (2-D) electrostatics considerations play a more dominant role than quantum-mechanical effects in the subthreshold behavior of ultrathin fully depleted silicon-on-insulator structures. We also show how modifications to the doping profile can be used to alleviate 2-D short-channel effects. © 2005 IEEE.
Jakub Kedzierski, Diane Boyd, et al.
IEDM 2003
Steven E. Laux, Karl Hess
IEEE Transactions on Electron Devices
Sungjae Lee, J. Johnson, et al.
VLSI Technology 2012
Hao Lin, Haitao Liu, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures