Conference paper
Scaling beyond conventional CMOS device
Meikei Ieong, Bruce Doris, et al.
ICSICT 2004
We present self-consistent solutions of ultrathin body device structures to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. We show that two-dimensional (2-D) electrostatics considerations play a more dominant role than quantum-mechanical effects in the subthreshold behavior of ultrathin fully depleted silicon-on-insulator structures. We also show how modifications to the doping profile can be used to alleviate 2-D short-channel effects. © 2005 IEEE.
Meikei Ieong, Bruce Doris, et al.
ICSICT 2004
Steven E. Laux, Arvind Kumar, et al.
IEEE TNANO
Steven E. Laux
IEEE Transactions on Electron Devices
Kangguo Cheng, A. Khakifirooz, et al.
VLSI Technology 2011