Jin Cai, Tak Ning, et al.
IEEE International SOI Conference 2008
We present self-consistent solutions of ultrathin body device structures to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. We show that two-dimensional (2-D) electrostatics considerations play a more dominant role than quantum-mechanical effects in the subthreshold behavior of ultrathin fully depleted silicon-on-insulator structures. We also show how modifications to the doping profile can be used to alleviate 2-D short-channel effects. © 2005 IEEE.
Jin Cai, Tak Ning, et al.
IEEE International SOI Conference 2008
Tenko Yamashita, Veeraraghvan S. Basker, et al.
VLSI Technology 2011
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Kangguo Cheng, A. Khakifirooz, et al.
VLSI Technology 2011