Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices
- H. Jagannathan
- B. Anderson
- et al.
- 2021
- IEDM 2021
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11 results for Ruilong Xie
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
- J. Zhang
- S. Pancharatnam
- et al.
- 2019
- IEDM 2019
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Manufacturing Yield Improvement for Advanced CMOS Technology Middle-of-Line Interconnect with Cobalt Metallization : YE: YieldEnhancement/Learning
- Susan Fan
- P. Jamison
- et al.
- 2023
- ASMC 2023
Parasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet Transistors
- Su-Chen Fan
- Ruilong Xie
- et al.
- 2020
- IITC 2020
Self-Allancd Gate Contact (SAGC) for CMOS technology scaling beyond 7nm
- Ruilong Xie
- Chanro Park
- et al.
- 2019
- VLSI Technology 2019
Gate-Cut-Last in RMG to Enable Gate Extension Scaling and Parasitic Capacitance Reduction
- A. Greene
- Huimei Zhou
- et al.
- 2019
- VLSI Technology 2019
Gas cluster ion beam processing for improved self aligned contact yield at 7 nm node FinFET: MJ: MOL and junction interfaces
- Su Chen Fan
- Sean Teehan
- et al.
- 2018
- ASMC 2018
CMP: Consideration of stop-on selectivity in advanced node semiconductor manufacturing technology
- Stan Tsai
- Hari Amanapu
- et al.
- 2017
- ECS Meeting 2017 - New Orleans
10nm FINFET technology for low power and high performance applications
- D. Guo
- H. Shang
- et al.
- 2014
- ICSICT 2014