Critical Assessment of Soft Breakdown Stability Time and the Implementation of New Post-Breakdown Methodology for ultra-thin gate oxides
- E. Wu
- J. Suñé
- et al.
- 2003
- IEDM 2003
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169 results for Jim Stathis
Reliability projection for ultra-thin oxides at low voltage
- J.H. Stathis
- D.J. DiMaria
- 1998
- IEDM 1998
Superior PBTI reliability for SOI FinFET technologies and its physical understanding
- Miaomiao Wang
- Ramachandran Muralidhar
- et al.
- 2013
- IEEE Electron Device Letters
Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates
- Sufi Zafar
- Byoung H. Lee
- et al.
- 2004
- IEEE Electron Device Letters
Breakdown transients in ultrathin gate oxides: Transition in the degradation rate
- S. Lombardo
- J.H. Stathis
- et al.
- 2003
- Physical Review Letters
Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate
- S. Lombardo
- J.H. Stathis
- et al.
- 2003
- Physical Review Letters
A model for gate-oxide breakdown in CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IEEE Electron Device Letters
Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
- Barry P. Linder
- Salvatore Lombardo
- et al.
- 2002
- IEEE Electron Device Letters
The impact of gate-oxide breakdown SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- IEEE Electron Device Letters
Hydrogen electrochemistry and stress-induced leakage current in silica
- Peter E. Blöchl
- James H. Stathis
- 1999
- Physical Review Letters