Dependence of post-breakdown conduction on gate oxide thickness
- S. Lombardo
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
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96 results for Barry P. Linder
Transistor-limited constant voltage stress of gate dielectrics
- B.P. Linder
- D.J. Frank
- et al.
- 2001
- VLSI Technology 2001
Calculating the error in long term oxide reliability estimates
- B.P. Linder
- J.H. Stathis
- et al.
- 2001
- IRPS 2001
Calculating the error in long term oxide reliability estimates
- B.P. Linder
- J.H. Stathis
- et al.
- 2001
- IRPS 2001
Breakdown measurements of ultra-thin SiO2 at low voltage
- J.H. Stathis
- A. Vayshenker
- et al.
- 2000
- VLSI Technology 2000
Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission
- Franco Stellari
- Keith A. Jenkins
- et al.
- 2016
- IEEE T-ED
Performance degradation analysis and hot-carrier injection impact on the lifetime prediction of LC voltage control oscillator
- Chih-Hsiang Ho
- Keith A. Jenkins
- et al.
- 2015
- IEEE T-ED
Materials and electrical characterization of physical vapor deposited Lax Lu1-x Oinf3 thin films on 300 mm silicon
- L.F. Edge
- T. Vo
- et al.
- 2011
- Applied Physics Letters
Interfacial layer optimization of high-k/metal gate stacks for low temperature processing
- Barry P. Linder
- Vijay Narayanan
- et al.
- 2009
- Microelectronic Engineering
Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2007
- Microelectronic Engineering