Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IRPS 2003
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96 results for Barry P. Linder
Breakdown transients in ultrathin gate oxides: Transition in the degradation rate
- S. Lombardo
- J.H. Stathis
- et al.
- 2003
- Physical Review Letters
Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate
- S. Lombardo
- J.H. Stathis
- et al.
- 2003
- Physical Review Letters
Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IRPS 2003
Growth and scaling of oxide conduction after breakdown
- Barry P. Linder
- James H. Stathis
- et al.
- 2003
- IRPS 2003
A model for gate-oxide breakdown in CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IEEE Electron Device Letters
Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
- Barry P. Linder
- Salvatore Lombardo
- et al.
- 2002
- IEEE Electron Device Letters
The impact of gate-oxide breakdown SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- IEEE Electron Device Letters
Analysis of the effect of the gate oxide breakdown on SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
Dependence of post-breakdown conduction on gate oxide thickness
- S. Lombardo
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability