A 16Mb MRAM featuring bootstrapped write drivers
- J.K. DeBrosse
- C. Arndt
- et al.
- 2004
- VLSI Circuits 2004
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8 results for Heinz Hoenigschmid
A High-Speed 128Kbit MRAM Core for Future Universal Memory Applications
- A. Bette
- J.K. DeBrosse
- et al.
- 2003
- VLSI Circuits 2003
A 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications
- A.R. Sitaram
- D.W. Abraham
- et al.
- 2003
- VLSI Technology 2003
0.21 μm2 7F2 trench cell with a locally-open globally-folded dual bitline for 1 Gb/4 Gb DRAM
- C. Radens
- U. Gruening
- et al.
- 1998
- VLSI Technology 1998
A 16-Mb MR AM featuring bootstrapped write drivers
- Dietmar Gogl
- Christian Arndt
- et al.
- 2005
- IEEE Journal of Solid-State Circuits
A High-Speed 128-kb MRAM Core for Future Universal Memory Applications
- John DeBrosse
- Dietmar Gogl
- et al.
- 2004
- IEEE Journal of Solid-State Circuits
Memories of tomorrow
- William Reohr
- Heinz Hönigschmid
- et al.
- 2002
- IEEE Circuits and Devices Magazine
A 7F2 cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAM's
- Heinz Hoenigschmid
- Alexander Frey
- et al.
- 2000
- IEEE Journal of Solid-State Circuits