Memories of tomorrow
William Reohr, Heinz Hönigschmid, et al.
IEEE Circuits and Devices Magazine
A 16-Mb magnetic random access memory (MRAM) is demonstrated in 0.18-νm three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest density MRAM reported to date, utilizes a 1.42 μm≥2∼ 1-transistor 1-magnetic tunnel junction (1T1MTJ) cell, measures 79 mm2 and features a & 16 asynchronous SRAM-like interface. The paper describes the cell, architecture, and circuit techniques unique to multi-Mb MRAM design, including a novel bootstrapped write driver circuit. Hardware results are presented. © 2005 IEEE.
William Reohr, Heinz Hönigschmid, et al.
IEEE Circuits and Devices Magazine
William Reohr, Heinz Hönigschmid, et al.
IEEE Circuits and Devices Magazine
John DeBrosse, Dietmar Gogl, et al.
IEEE Journal of Solid-State Circuits
John DeBrosse, Dietmar Gogl, et al.
IEEE Journal of Solid-State Circuits