Transient boron diffusion in ion-implanted crystalline and amorphous silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1988
- Journal of Applied Physics
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119 results for Stephan A. Cohen
Rapid thermal annealing of hydrogenated amorphous silicon grown at low temperature
- P. Fiorini
- I. Haller
- et al.
- 1987
- Journal of Applied Physics
Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing
- H.B. Harrison
- Subramanian S. Iyer
- et al.
- 1987
- Applied Physics Letters
Diffusion of boron and arsenic implants in 〈111〉 and 〈100〉 Si during rapid thermal annealing
- R. Kalish
- G.S. Oehrlein
- et al.
- 1985
- Nuclear Inst. and Methods in Physics Research, B
Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1985
- Applied Physics Letters
Reduction of electron and hole trapping in SiO2 by rapid thermal annealing
- Z.A. Weinberg
- D.R. Young
- et al.
- 1984
- Applied Physics Letters
Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon
- G.S. Oehrlein
- S. Cohen
- et al.
- 1984
- Applied Physics Letters
Investigation of the silicon beading phenomena during zone-melting recrystallization
- Z.A. Weinberg
- V.R. Deline
- et al.
- 1983
- Applied Physics Letters
Ovulation Detection by Monitoring Temperature During Sleep
- Z.A. Weinberg
- S. Cohen
- 1983
- IEEE T-BME