Short Time Annealing of Coevaporated Tungsten Silicide Films
- T.O. Sedgwick
- F.M. d'Heurle
- et al.
- 2019
- JES
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119 results for Stephan A. Cohen
Electrical Properties of Chemical-Mechanical Polished Tetraethyl Orthosilicate Films with and Without Capping Layers
- S. Cohen
- M.A. Jaso
- et al.
- 2019
- JES
Extreme-low k porous pSiCOH dielectrics prepared by PECVD
- H. You
- Petra Mennell
- et al.
- 2018
- JVSTB
Low hydrogen silicon carbon nitride cap for high performance sub-10 nm Cu-low k interconnect
- Son Van Nguyen
- Shobha Hosadugra
- et al.
- 2017
- ECS J. Solid State Sci. Technol.
Advanced single precursor based pSiCOH k = 2.4 for ULSI interconnects
- Deepika Priyadarshini
- Son Van Nguyen
- et al.
- 2017
- JVSTB
Detection of charge carrier confinement into mobile ionic defects in nanoporous dielectric films for advanced interconnects
- Juan Borja
- Joel L. Plawsky
- et al.
- 2014
- JVSTA
Effect of low-frequency radio frequency on plasma-enhanced chemical vapor deposited ultra low-κ dielectric films for very large-scale integrated interconnects
- E. T. Todd Ryan
- Stephen M. Gates
- et al.
- 2014
- Journal of Applied Physics
Contamination mitigation of hydrogen silsesquioxane resist processed with Na+-containing developer for nanoscale CMOS device patterning
- Markus Brink
- Isaac Lauer
- et al.
- 2014
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)
- F. Ito
- H. Shobha
- et al.
- 2012
- Microelectronic Engineering
Processing and moisture effects on TDDB for Cu/ULK BEOL structures
- E. Liniger
- T.M. Shaw
- et al.
- 2012
- Microelectronic Engineering