Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices
- H. Jagannathan
- B. Anderson
- et al.
- 2021
- IEDM 2021
Publications
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19 results for J. Strane
Parasitic Resistance Reduction Strategies for Advanced CMOS FinFETs beyond 7nm
- Heng Wu
- Oleg Gluschenkov
- et al.
- 2018
- IEDM 2018
Integrated dual SPE processes with low contact resistivity for future CMOS technologies
- Heng Wu
- Soon-Cheon Seo
- et al.
- 2017
- IEDM 2017
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- G. Tsutsui
- Ruqiang Bao
- et al.
- 2016
- IEDM 2016
Optimizing stressor film deposition sequence in polish rate order for best planarization
- John H. Zhang
- Changyong Xiao
- et al.
- 2011
- MRS Spring Meeting 2011
Manufacturing Yield Improvement for Advanced CMOS Technology Middle-of-Line Interconnect with Cobalt Metallization : YE: YieldEnhancement/Learning
- Susan Fan
- P. Jamison
- et al.
- 2023
- ASMC 2023
Middle of Line (MOL) Process Investigation in Ring Oscillator failure
- Victor Chan
- M. Bergendahl
- et al.
- 2020
- ASMC 2020
Failure isolation in ring oscillator circuit and defect detection in CMOS technology research
- Victor Chan
- M. Bergendahl
- et al.
- 2019
- ASMC 2019
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Fin formation using graphoepitaxy DSA for FinFET device fabrication
- Chi Chun Liu
- Fee Li Lie
- et al.
- 2015
- SPIE Advanced Lithography 2015