In-Memory Compute Chips with Carbon-based Projected Phase-Change Memory Devices
- G.S. Syed
- K. Brew
- et al.
- 2023
- IEDM 2023
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31 results for Cheng-Wei Cheng
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
- Jeehwan Kim
- Can Bayram
- et al.
- 2014
- Nature Communications
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics
- Cheng-Wei Cheng
- Kuen-Ting Shiu
- et al.
- 2013
- Nature Communications
CMOS compatible high performance IIIV devices: Opportunities and challenges
- Yanning Sun
- Kuen-Ting Shiu
- et al.
- 2016
- ECS Meeting 2016
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
- W. Chien
- E. Lai
- et al.
- 2023
- IMW 2023
Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
- W. Chien
- Lynne Gignac
- et al.
- 2022
- IRPS 2022